FQB34N20TM
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
$2.51
Available to order
Reference Price (USD)
1+
$2.51000
500+
$2.4849
1000+
$2.4598
1500+
$2.4347
2000+
$2.4096
2500+
$2.3845
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the FQB34N20TM single MOSFET from Fairchild Semiconductor. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Fairchild Semiconductor's FQB34N20TM for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Infineon Technologies
IRFR9024NTRLPBF
Infineon Technologies
BSZ099N06LS5ATMA1
Fairchild Semiconductor
RFD16N05SM
Infineon Technologies
IRFR4105ZTRPBF
STMicroelectronics
STK800
Vishay Siliconix
SIR122LDP-T1-RE3
onsemi
NVMFS5C456NLWFAFT1G
Rectron USA
RM130N200T2
STMicroelectronics
STH410N4F7-2AG
Vishay Siliconix