FQB4N80TM
onsemi
onsemi
MOSFET N-CH 800V 3.9A D2PAK
$1.94
Available to order
Reference Price (USD)
800+
$0.95321
1,600+
$0.86565
2,400+
$0.81093
5,600+
$0.77262
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FQB4N80TM from onsemi sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to onsemi's FQB4N80TM for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Fairchild Semiconductor
FDD2570
Infineon Technologies
IRF6617TRPBF
Rohm Semiconductor
RSF010P03TL
onsemi
NVHL020N090SC1
Renesas Electronics America Inc
2SJ463A(0)-T1-A
NTE Electronics, Inc
NTE492
Rohm Semiconductor
RSY160P05TL
onsemi
NTTFS4C13NTAG
NXP USA Inc.
PMDXB550UNE/S500147
Taiwan Semiconductor Corporation