FQH90N10V2
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
$2.98
Available to order
Reference Price (USD)
1+
$2.98000
500+
$2.9502
1000+
$2.9204
1500+
$2.8906
2000+
$2.8608
2500+
$2.831
Exquisite packaging
Discount
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Optimize your power electronics with the FQH90N10V2 single MOSFET from Fairchild Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the FQH90N10V2 combines cutting-edge technology with Fairchild Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 52.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 330W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD
- Package / Case: TO-247-3
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