FQI12N60TU
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 600V 10.5A I2PAK
$1.31
Available to order
Reference Price (USD)
1+
$1.31000
500+
$1.2969
1000+
$1.2838
1500+
$1.2707
2000+
$1.2576
2500+
$1.2445
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the FQI12N60TU single MOSFET from Fairchild Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the FQI12N60TU combines cutting-edge technology with Fairchild Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK (TO-262)
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
IXYS
IXTH11P50
Vishay Siliconix
SIHP25N60EFL-GE3
STMicroelectronics
STP5N60M2
Alpha & Omega Semiconductor Inc.
AON6264E
IXYS
IXTY26P10T
Alpha & Omega Semiconductor Inc.
AO4262E
Renesas Electronics America Inc
2SK1582-T1B-A
Vishay Siliconix
SIHF9630STRL-GE3
Fairchild Semiconductor
HUFA76419P3
Infineon Technologies