FQP9N90C
onsemi
onsemi
MOSFET N-CH 900V 8A TO220-3
$4.15
Available to order
Reference Price (USD)
1+
$3.52000
10+
$3.15300
100+
$2.60340
500+
$2.12714
1,000+
$1.80963
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the FQP9N90C single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's FQP9N90C for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 205W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
IXYS
IXFK32N100X
Alpha & Omega Semiconductor Inc.
AON6262E
onsemi
FQP3N30
Taiwan Semiconductor Corporation
TSM7NC65CF C0G
Vishay Siliconix
SI2307CDS-T1-GE3
Diodes Incorporated
DMN3065LW-7
Infineon Technologies
IPP023NE7N3GXKSA1
Panjit International Inc.
PJP7NA65_T0_00001
Toshiba Semiconductor and Storage
SSM3K72KFS,LF
Infineon Technologies