FQPF8N80C
onsemi
onsemi
MOSFET N-CH 800V 8A TO220F
$2.86
Available to order
Reference Price (USD)
1+
$3.03000
10+
$2.74300
100+
$2.21950
500+
$1.74358
1,000+
$1.45803
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the FQPF8N80C single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's FQPF8N80C for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 59W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3
- Package / Case: TO-220-3 Full Pack
Related Products
Rectron USA
RM5N60S4
Panjit International Inc.
PJQ2408_R1_00001
Infineon Technologies
IRFZ44ZSTRRPBF
IXYS
IXFN210N30P3
Diodes Incorporated
BSS123W-7-F
Vishay Siliconix
SQJA88EP-T1_BE3
Microchip Technology
APT5018SLLG
Vishay Siliconix
SISH114ADN-T1-GE3
Fairchild Semiconductor
FDS7760A
Infineon Technologies