FR900R12IP4DBPSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE PP IHM I XHP 1 7KV
$2,008.80
Available to order
Reference Price (USD)
1+
$2008.80000
500+
$1988.712
1000+
$1968.624
1500+
$1948.536
2000+
$1928.448
2500+
$1908.36
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's FR900R12IP4DBPSA1 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the FR900R12IP4DBPSA1 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Dual Brake Chopper
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 900 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-PRIME3-1
Related Products
Infineon Technologies
FZ2400R12HE4PB9HPSA1
onsemi
NXH80T120L3Q0S3G
Infineon Technologies
FS15R06XE3BOMA1
Microchip Technology
APT200GT60JR
Infineon Technologies
FD1000R33HE3KBPSA1
Microchip Technology
APTGL120TA120TPG
Infineon Technologies
DF1400R12IP4DBOSA1
Infineon Technologies
IFF300B12ME4PB11BPSA1
Microchip Technology
APTGL60TL120T3G
Infineon Technologies