FS03MR12A6MA1LBBPSA1
Infineon Technologies
Infineon Technologies
HYBRID PACK DRIVE SIC AG-HYBRIDD
$3,516.48
Available to order
Reference Price (USD)
1+
$3516.48000
500+
$3481.3152
1000+
$3446.1504
1500+
$3410.9856
2000+
$3375.8208
2500+
$3340.656
Exquisite packaging
Discount
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Discover the high-performance FS03MR12A6MA1LBBPSA1 from Infineon Technologies, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the FS03MR12A6MA1LBBPSA1 delivers unmatched performance. Trust Infineon Technologies's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 400A
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 240mA
- Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 42.5nF @ 600V
- Power - Max: 20mW
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-HYBRIDD-2
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