FS100R07N3E4BOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 650V 100A 335W
$93.59
Available to order
Reference Price (USD)
1+
$93.59000
500+
$92.6541
1000+
$91.7182
1500+
$90.7823
2000+
$89.8464
2500+
$88.9105
Exquisite packaging
Discount
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Infineon Technologies's FS100R07N3E4BOSA1 represents the cutting edge in Transistors - IGBTs - Modules technology. This discrete semiconductor product delivers superior power control with its optimized gate-drive characteristics and short-circuit ruggedness. The module's innovative design features include an advanced NPT trench construction and low inductance package. Primary applications include traction systems, induction heating, and high-frequency power supplies. A typical use case would be implementing the FS100R07N3E4BOSA1 in industrial servo drives or medium-voltage frequency converters. Trust Infineon Technologies's expertise in IGBT modules for energy-efficient power management solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Power - Max: 335 W
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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