FS75R12KE3B9BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO AG-ECONO2B-311
$183.60
Available to order
Reference Price (USD)
1+
$183.60000
500+
$181.764
1000+
$179.928
1500+
$178.092
2000+
$176.256
2500+
$174.42
Exquisite packaging
Discount
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Experience next-generation power control with Infineon Technologies's FS75R12KE3B9BPSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FS75R12KE3B9BPSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FS75R12KE3B9BPSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the FS75R12KE3B9BPSA1 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 105 A
- Power - Max: 350 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2B
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