FS75R12KT3BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO AG-ECONO2B-311
$166.18
Available to order
Reference Price (USD)
1+
$166.18000
500+
$164.5182
1000+
$162.8564
1500+
$161.1946
2000+
$159.5328
2500+
$157.871
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's FS75R12KT3BPSA1 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the FS75R12KT3BPSA1 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 105 A
- Power - Max: 355 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2B
Related Products
Infineon Technologies
FP15R06YE3B4BOMA1
Infineon Technologies
IFF600B12ME4B11BPSA1
Infineon Technologies
FS100R12N2T4B11BOSA1
Microchip Technology
APTGTQ100DDA65T3G
Microchip Technology
APTGT150TDU60PG
Infineon Technologies
FF225R65T3E3P2BPSA1
Infineon Technologies
BSM15GD120DN2BOSA1
Infineon Technologies
FS3L50R07W2H3B11BPSA1
Infineon Technologies
BSM25GB120DN2
Infineon Technologies