FS950R08A6P2LBBPSA1
Infineon Technologies
Infineon Technologies
HYBRID PACK DRIVE AG-HYBRIDD-1
$1,060.80
Available to order
Reference Price (USD)
1+
$1060.80000
500+
$1050.192
1000+
$1039.584
1500+
$1028.976
2000+
$1018.368
2500+
$1007.76
Exquisite packaging
Discount
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The FS950R08A6P2LBBPSA1 by Infineon Technologies redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the FS950R08A6P2LBBPSA1 in high-efficiency servo controllers for manufacturing automation. Infineon Technologies combines innovation with quality in every FS950R08A6P2LBBPSA1 module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: 3 Independent
- Voltage - Collector Emitter Breakdown (Max): 750 V
- Current - Collector (Ic) (Max): 450 A
- Power - Max: 870 W
- Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-HYBRIDD-2
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