FZ400R17KE3HOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1700V 620A 2250W
$212.96
Available to order
Reference Price (USD)
10+
$126.74800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's FZ400R17KE3HOSA1 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the FZ400R17KE3HOSA1 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 620 A
- Power - Max: 2250 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 400A
- Current - Collector Cutoff (Max): 3 mA
- Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FS30R06VE3BOMA1
Microchip Technology
APT100GT120JU2
Infineon Technologies
FZ1000R33HL3BPSA1
Infineon Technologies
FD300R17KE4PHOSA1
Infineon Technologies
FP25R12W2T4B11BOMA1
Microchip Technology
APT200GN60JDQ4
Infineon Technologies
FD200R12KE3HOSA1
Infineon Technologies
FF450R12IE4BOSA2
IXYS
IXGN200N60B3
Infineon Technologies