FZ800R12KE3HOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 800A 3550W
$258.82
Available to order
Reference Price (USD)
1+
$155.13000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the FZ800R12KE3HOSA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The FZ800R12KE3HOSA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the FZ800R12KE3HOSA1.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 800 A
- Power - Max: 3550 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 800A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 56 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FP25R12KT3BPSA1
Infineon Technologies
FF300R07ME4BOSA1
Infineon Technologies
FZ1200R33HE3BPSA1
Infineon Technologies
FP50R12KS4CBOSA1
Infineon Technologies
FF900R12IE4BOSA1
Infineon Technologies
FS25R12KT3BOSA1
Infineon Technologies
FS75R12KE3GBOSA1
Infineon Technologies
FZ300R12KE3GHOSA1
Infineon Technologies
FS3L200R10W3S7FB11BPSA1
Infineon Technologies