FZ825R33HE4DBPSA1
Infineon Technologies
Infineon Technologies
HV B SINGLE SWITCH POWER MODULES
$1,687.68
Available to order
Reference Price (USD)
1+
$1687.68000
500+
$1670.8032
1000+
$1653.9264
1500+
$1637.0496
2000+
$1620.1728
2500+
$1603.296
Exquisite packaging
Discount
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Infineon Technologies's FZ825R33HE4DBPSA1 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the FZ825R33HE4DBPSA1 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single Switch
- Voltage - Collector Emitter Breakdown (Max): 3300 V
- Current - Collector (Ic) (Max): 825 A
- Power - Max: 2.4 MW
- Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 825A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 93.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-IHVB130-3
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