FZT603QTA
Diodes Incorporated
Diodes Incorporated
TRANS NPN DARL 80V 2A SOT223-3
$0.44
Available to order
Reference Price (USD)
1+
$0.43725
500+
$0.4328775
1000+
$0.428505
1500+
$0.4241325
2000+
$0.41976
2500+
$0.4153875
Exquisite packaging
Discount
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The FZT603QTA Bipolar Junction Transistor (BJT) from Diodes Incorporated is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the FZT603QTA is a reliable component for demanding applications. Diodes Incorporated's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.13V @ 20mA, 2A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 500mA, 5V
- Power - Max: 1.2 W
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
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