FZT753QTC
Diodes Incorporated
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
$0.31
Available to order
Reference Price (USD)
1+
$0.30740
500+
$0.304326
1000+
$0.301252
1500+
$0.298178
2000+
$0.295104
2500+
$0.29203
Exquisite packaging
Discount
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Enhance your circuit designs with the FZT753QTC Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The FZT753QTC is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Diodes Incorporated to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
- Power - Max: 1.2 W
- Frequency - Transition: 140MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
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Diodes Incorporated