FZT757TA
Diodes Incorporated
Diodes Incorporated
TRANS PNP 300V 0.5A SOT223-3
$0.88
Available to order
Reference Price (USD)
1+
$0.88000
500+
$0.8712
1000+
$0.8624
1500+
$0.8536
2000+
$0.8448
2500+
$0.836
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the FZT757TA Bipolar Junction Transistor (BJT) from Diodes Incorporated, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the FZT757TA is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Diodes Incorporated for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
- Power - Max: 2 W
- Frequency - Transition: 30MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
Related Products
Diodes Incorporated
BC857AW-7-F
Sanyo
2SC4449E-AA
Micro Commercial Co
TIP127L-BP
Diodes Incorporated
MMBTA92Q-7-F
onsemi
MJL1302AG
onsemi
BCW32LT1
onsemi
BC547CTFR
NXP USA Inc.
BC848B/DG/B3215
Nexperia USA Inc.
PMBT2222A,235
Nexperia USA Inc.