FZT956QTA
Diodes Incorporated
Diodes Incorporated
PWR HI VOLTAGE TRANSISTOR SOT223
$0.61
Available to order
Reference Price (USD)
1+
$0.61247
500+
$0.6063453
1000+
$0.6002206
1500+
$0.5940959
2000+
$0.5879712
2500+
$0.5818465
Exquisite packaging
Discount
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The FZT956QTA Bipolar Junction Transistor (BJT) from Diodes Incorporated is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the FZT956QTA is a reliable component for demanding applications. Diodes Incorporated's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 200 V
- Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
- Power - Max: 1.6 W
- Frequency - Transition: 110MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
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