FZT957QTC
Diodes Incorporated
Diodes Incorporated
PWR HI VOLTAGE TRANSISTOR SOT223
$0.55
Available to order
Reference Price (USD)
1+
$0.54885
500+
$0.5433615
1000+
$0.537873
1500+
$0.5323845
2000+
$0.526896
2500+
$0.5214075
Exquisite packaging
Discount
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Optimize your electronic systems with the FZT957QTC Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the FZT957QTC delivers superior performance in diverse environments. Diodes Incorporated's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 240mV @ 300mA, 1A
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
- Power - Max: 1.6 W
- Frequency - Transition: 85MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
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