G2R1000MT17J
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 3A TO263-7
$6.82
Available to order
Reference Price (USD)
1+
$6.82000
500+
$6.7518
1000+
$6.6836
1500+
$6.6154
2000+
$6.5472
2500+
$6.479
Exquisite packaging
Discount
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Meet the G2R1000MT17J by GeneSiC Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The G2R1000MT17J stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose GeneSiC Semiconductor.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
- Vgs(th) (Max) @ Id: 4V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 54W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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