G3R40MT12D
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 71A TO247-3
$18.46
Available to order
Reference Price (USD)
1+
$18.46000
500+
$18.2754
1000+
$18.0908
1500+
$17.9062
2000+
$17.7216
2500+
$17.537
Exquisite packaging
Discount
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Meet the G3R40MT12D by GeneSiC Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The G3R40MT12D stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose GeneSiC Semiconductor.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
- Vgs(th) (Max) @ Id: 2.69V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 333W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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