G3R75MT12D
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 41A TO247-3
$11.13
Available to order
Reference Price (USD)
1+
$11.13000
500+
$11.0187
1000+
$10.9074
1500+
$10.7961
2000+
$10.6848
2500+
$10.5735
Exquisite packaging
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Meet the G3R75MT12D by GeneSiC Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The G3R75MT12D stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose GeneSiC Semiconductor.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
- Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 207W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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