Shopping cart

Subtotal: $0.00

G3S06506D

Global Power Technology-GPT
G3S06506D Preview
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
$4.34
Available to order
Reference Price (USD)
1+
$4.34000
500+
$4.2966
1000+
$4.2532
1500+
$4.2098
2000+
$4.1664
2500+
$4.123
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 22.5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 650 V
  • Capacitance @ Vr, F: 424pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263
  • Operating Temperature - Junction: -55°C ~ 175°C

Related Products

Vishay General Semiconductor - Diodes Division

VS-8ETL06SHM3

Comchip Technology

CFRA104-G

Vishay General Semiconductor - Diodes Division

VIT5200-E3/4W

Diodes Incorporated

SBR5E45P5-13

Global Power Technology-GPT

G4S06508HT

Panjit International Inc.

MMBD4148_R1_00001

Vishay General Semiconductor - Diodes Division

FESB16CT-E3/81

Nexperia USA Inc.

PMEG120G30ELPX

Infineon Technologies

D2601N90TXPSA1

Vishay General Semiconductor - Diodes Division

BYT51D-TR

Top