G3S06510D
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
$5.66
Available to order
Reference Price (USD)
1+
$5.66000
500+
$5.6034
1000+
$5.5468
1500+
$5.4902
2000+
$5.4336
2500+
$5.377
Exquisite packaging
Discount
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Enhance your circuit performance with the G3S06510D single rectifier diode from Global Power Technology-GPT. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the G3S06510D delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. Global Power Technology-GPT's G3S06510D is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 34A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 690pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263
- Operating Temperature - Junction: -55°C ~ 175°C
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