G3S12002A
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 2A 2-PI
$4.08
Available to order
Reference Price (USD)
1+
$4.08000
500+
$4.0392
1000+
$3.9984
1500+
$3.9576
2000+
$3.9168
2500+
$3.876
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize your device's efficiency with the G3S12002A single rectifier diode from Global Power Technology-GPT. This Discrete Semiconductor Product is crafted for precision, offering fast recovery times and high current handling. It is ideal for use in power supplies, motor controls, and lighting systems, where energy efficiency is crucial. The G3S12002A is also employed in agricultural machinery and marine electronics, proving its versatility across industries. Global Power Technology-GPT's G3S12002A is synonymous with reliability, making it a trusted choice for engineers worldwide.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 7A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: 136pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Diodes Incorporated
MURS4100C
SMC Diode Solutions
MBR1660
Microchip Technology
UES2604HR2
Panjit International Inc.
SB54AFC-AU_R1_000A1
Diotec Semiconductor
S2W
SMC Diode Solutions
SK36
Nexperia USA Inc.
PMEG3010ET,215
Vishay General Semiconductor - Diodes Division
NS8AT-E3/45
Nexperia USA Inc.
BAS70LS-QYL
Taiwan Semiconductor Corporation