G3S12015L
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 15A 3-P
$22.08
Available to order
Reference Price (USD)
1+
$22.08000
500+
$21.8592
1000+
$21.6384
1500+
$21.4176
2000+
$21.1968
2500+
$20.976
Exquisite packaging
Discount
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The G3S12015L by Global Power Technology-GPT is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The G3S12015L is also used in smart home devices and wearable technology, ensuring seamless operation. Global Power Technology-GPT's expertise in semiconductor technology guarantees that the G3S12015L delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 55A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: 1700pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
- Operating Temperature - Junction: -55°C ~ 175°C
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