G4616
Goford Semiconductor
Goford Semiconductor
N+P/-40V,RD(MAX)<20M@10V,RD(MAX)
$0.62
Available to order
Reference Price (USD)
1+
$0.62000
500+
$0.6138
1000+
$0.6076
1500+
$0.6014
2000+
$0.5952
2500+
$0.589
Exquisite packaging
Discount
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The G4616 by Goford Semiconductor is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the G4616 provides reliable operation under stringent conditions. Goford Semiconductor's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 20V, 520pF @ 20V
- Power - Max: 2W (Tc), 2.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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