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G5S06504QT

Global Power Technology-GPT
G5S06504QT Preview
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 4A DFN 8
$3.29
Available to order
Reference Price (USD)
1+
$3.29000
500+
$3.2571
1000+
$3.2242
1500+
$3.1913
2000+
$3.1584
2500+
$3.1255
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 14A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 650 V
  • Capacitance @ Vr, F: 181pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 4-PowerTSFN
  • Supplier Device Package: 4-DFN (8x8)
  • Operating Temperature - Junction: -55°C ~ 175°C

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