Shopping cart

Subtotal: $0.00

G5S12015PM

Global Power Technology-GPT
G5S12015PM Preview
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 15A 2-P
$17.63
Available to order
Reference Price (USD)
1+
$17.63000
500+
$17.4537
1000+
$17.2774
1500+
$17.1011
2000+
$16.9248
2500+
$16.7485
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 55A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
  • Capacitance @ Vr, F: 1370pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -55°C ~ 175°C

Related Products

Vishay General Semiconductor - Diodes Division

SD103CWS-E3-08

Comchip Technology

CDBF0330

NTE Electronics, Inc

NTE525

Micro Commercial Co

FR152GP-TP

Vishay General Semiconductor - Diodes Division

VS-8EWF02STRR-M3

Vishay General Semiconductor - Diodes Division

S4PJHM3_A/H

Vishay General Semiconductor - Diodes Division

SS10P5-M3/86A

Solid State Inc.

40HFR120

Top