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G5S12016B

Global Power Technology-GPT
G5S12016B Preview
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 16A 3-P
$14.88
Available to order
Reference Price (USD)
1+
$14.88000
500+
$14.7312
1000+
$14.5824
1500+
$14.4336
2000+
$14.2848
2500+
$14.136
Exquisite packaging
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Specifications

  • Product Status: Active
  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 27.9A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AB

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