G5S12016BM
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 16A 3-P
$15.25
Available to order
Reference Price (USD)
1+
$15.25000
500+
$15.0975
1000+
$14.945
1500+
$14.7925
2000+
$14.64
2500+
$14.4875
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, Global Power Technology-GPT's G5S12016BM represents the next generation of rectifier diode arrays. This Discrete Semiconductor Product features innovative passivation layers that enhance reliability in humid conditions. Its primary applications include marine electronics, oil drilling equipment, and military power systems where corrosion resistance is paramount. With Global Power Technology-GPT's proprietary screening processes, the G5S12016BM guarantees exceptional performance in the most challenging electrical environments.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 27.9A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
Related Products
Vishay General Semiconductor - Diodes Division
SBLB25L30CT-E3/45
Rohm Semiconductor
SCS230AE2GC11
SMC Diode Solutions
MBRF1045CT
onsemi
NSVMMBD352WT1G
Vishay General Semiconductor - Diodes Division
VS-8CWH02FNTR-M3
Vishay General Semiconductor - Diodes Division
VS-6CSH02HM3/87A
onsemi
MBRB41H100CT-1G
Vishay General Semiconductor - Diodes Division
V40DM60CHM3/I
Nexperia USA Inc.
BAV70M,315
GeneSiC Semiconductor