Shopping cart

Subtotal: $0.00

GB02SLT12-252

GeneSiC Semiconductor
GB02SLT12-252 Preview
GeneSiC Semiconductor
DIODE SIC SCHKY 1.2KV 2A TO252
$0.00
Available to order
Reference Price (USD)
2,500+
$1.59672
5,000+
$1.53669
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
  • Capacitance @ Vr, F: 131pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
  • Operating Temperature - Junction: -55°C ~ 175°C

Related Products

Vishay General Semiconductor - Diodes Division

VS-40EPF06PBF

Micro Commercial Co

UF5405-TP

Vishay General Semiconductor - Diodes Division

BYD33DGP-E3/54

Micro Commercial Co

SMD16HE-TP

Taiwan Semiconductor Corporation

S1GL RHG

Taiwan Semiconductor Corporation

SS24L RQG

Taiwan Semiconductor Corporation

SF46G B0G

Taiwan Semiconductor Corporation

MUR8L60H

Vishay General Semiconductor - Diodes Division

GP10-4007E-E3/73

Top