GC1717-11
Microchip Technology
Microchip Technology
SI TVAR HERMETIC GLASS AXIAL
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GC1717-11 Variable Capacitance Diodes by Microchip Technology represent the next evolution in RF tuning components. These Varactors feature patented hyperabrupt junction technology for unprecedented linearity in phase noise-sensitive applications like atomic clocks and MRI machines. The copper-tungsten carrier provides excellent heat dissipation for high-power RF amplifiers. With typical applications including satellite payloads, electronic countermeasures, and terahertz research, GC1717-11 is the preferred choice when performance margins matter most. Each diode undergoes rigorous QPL testing to ensure military-grade reliability.
Specifications
- Product Status: Active
- Capacitance @ Vr, F: 22pF @ 4V, 1MHz
- Capacitance Ratio: 7
- Capacitance Ratio Condition: C0/C60
- Voltage - Peak Reverse (Max): 60 V
- Diode Type: Single
- Q @ Vr, F: 1000 @ 4V, 50MHz
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: -
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