GE12047BCA3
General Electric
General Electric
1200V 475A SiC Dual Module
$1,925.00
Available to order
Reference Price (USD)
1+
$1925.00000
500+
$1905.75
1000+
$1886.5
1500+
$1867.25
2000+
$1848
2500+
$1828.75
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the GE12047BCA3 from General Electric for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the GE12047BCA3 stands out for its reliability and efficiency. General Electric's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 Independent
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 475A
- Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
- Vgs(th) (Max) @ Id: 4.5V @ 160mA
- Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds: 29.3nF @ 600V
- Power - Max: 1250W
- Operating Temperature: -55°C ~ 150°C (Tc)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
Related Products
Diodes Incorporated
DMN3061SVT-13
Nexperia USA Inc.
NX3020NAKVYL
Diodes Incorporated
DMC4029SK4-13
Vishay Siliconix
SQ3585EV-T1_GE3
Diodes Incorporated
DMP1055UFDB-7
Vishay Siliconix
SI1926DL-T1-E3
Diodes Incorporated
DMTH6016LPDQ-13
Panjit International Inc.
PJL9850_R2_00001
Vishay Siliconix
SQJB48EP-T1_GE3
Alpha & Omega Semiconductor Inc.