GE12047CCA3
General Electric
General Electric
1200V 475A SIC HALF-BRIDGE MODUL
$1,925.00
Available to order
Reference Price (USD)
1+
$1925.00000
500+
$1905.75
1000+
$1886.5
1500+
$1867.25
2000+
$1848
2500+
$1828.75
Exquisite packaging
Discount
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Elevate your electronics with the GE12047CCA3 from General Electric, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the GE12047CCA3 provides the reliability and efficiency you need. General Electric's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 475A
- Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
- Vgs(th) (Max) @ Id: 4.5V @ 160mA
- Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds: 29.3nF @ 600V
- Power - Max: 1250W
- Operating Temperature: -55°C ~ 150°C (Tc)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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