Shopping cart

Subtotal: $0.00

GPAS1005

Taiwan Semiconductor Corporation
GPAS1005 Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A TO263AB
$0.55
Available to order
Reference Price (USD)
1+
$0.54978
500+
$0.5442822
1000+
$0.5387844
1500+
$0.5332866
2000+
$0.5277888
2500+
$0.522291
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D²PAK)
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Vishay General Semiconductor - Diodes Division

MURS120-E3/52T

Vishay General Semiconductor - Diodes Division

AR4PJHM3_A/H

Micro Commercial Co

SK310BH-LTP

Diodes Incorporated

RS1MB-13-F

NTE Electronics, Inc

NTE519-100

Diotec Semiconductor

PX1500B

Vishay General Semiconductor - Diodes Division

VS-EPH3006LHN3

Nexperia USA Inc.

PMEG4010AESBYL

Micro Commercial Co

UF1M-TP

Top