GPI65030DFN
GaNPower
GaNPower
GANFET N-CH 650V 30A DFN8X8
$15.00
Available to order
Reference Price (USD)
1+
$15.00000
500+
$14.85
1000+
$14.7
1500+
$14.55
2000+
$14.4
2500+
$14.25
Exquisite packaging
Discount
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Enhance your electronic projects with the GPI65030DFN single MOSFET from GaNPower. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust GaNPower's GPI65030DFN for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A
- Drive Voltage (Max Rds On, Min Rds On): 6V
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1.2V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V
- Vgs (Max): +7.5V, -12V
- Input Capacitance (Ciss) (Max) @ Vds: 241 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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