GPI65060DFN
GaNPower
GaNPower
GANFET N-CH 650V 60A DFN8X8
$30.00
Available to order
Reference Price (USD)
1+
$30.00000
500+
$29.7
1000+
$29.4
1500+
$29.1
2000+
$28.8
2500+
$28.5
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the GPI65060DFN single MOSFET from GaNPower. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the GPI65060DFN combines cutting-edge technology with GaNPower's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 60A
- Drive Voltage (Max Rds On, Min Rds On): 6V
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1.2V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 6 V
- Vgs (Max): +7.5V, -12V
- Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
Related Products
onsemi
FDFS2P106A
IXYS
IXTA1R4N100P
STMicroelectronics
STWA20N95K5
Rohm Semiconductor
RV2C014BCT2CL
Infineon Technologies
IPN60R2K0PFD7SATMA1
Panjit International Inc.
PJL9480_R2_00001
Infineon Technologies
IRFZ44ZLPBF
STMicroelectronics
STP80NF55
STMicroelectronics
STF18N65M2
Alpha & Omega Semiconductor Inc.