GPIHV30DFN
GaNPower
GaNPower
GANFET N-CH 1200V 30A DFN8X8
$22.00
Available to order
Reference Price (USD)
1+
$22.00000
500+
$21.78
1000+
$21.56
1500+
$21.34
2000+
$21.12
2500+
$20.9
Exquisite packaging
Discount
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The GPIHV30DFN from GaNPower redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the GPIHV30DFN offers the precision and reliability you need. Trust GaNPower to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 30A
- Drive Voltage (Max Rds On, Min Rds On): 6V
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1.4V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs: 8.25 nC @ 6 V
- Vgs (Max): +7.5V, -12V
- Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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