H5N2305P-E
Renesas Electronics America Inc
Renesas Electronics America Inc
POWER FIELD-EFFECT TRANSISTOR
$6.73
Available to order
Reference Price (USD)
1+
$6.73000
500+
$6.6627
1000+
$6.5954
1500+
$6.5281
2000+
$6.4608
2500+
$6.3935
Exquisite packaging
Discount
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Enhance your circuit designs with the H5N2305P-E Bipolar Junction Transistor (BJT) from Renesas Electronics America Inc. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The H5N2305P-E is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Renesas Electronics America Inc to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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