H7N1004FN-E-A9#B0F
Renesas Electronics America Inc
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
$1.28
Available to order
Reference Price (USD)
1+
$1.28000
500+
$1.2672
1000+
$1.2544
1500+
$1.2416
2000+
$1.2288
2500+
$1.216
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The H7N1004FN-E-A9#B0F by Renesas Electronics America Inc is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Renesas Electronics America Inc for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Vishay Siliconix
IRFIZ44GPBF
onsemi
NVTFS6H854NTAG
Diodes Incorporated
DMP6250SEQ-13
Texas Instruments
CSD17318Q2T
Vishay Siliconix
SUM40012EL-GE3
STMicroelectronics
STW70N60DM6-4
onsemi
FDB3632
Central Semiconductor Corp
CEDM8004 TR PBFREE
IXYS
IXFN32N80P
NXP USA Inc.