HAT1035R-EL-E
Renesas Electronics America Inc
Renesas Electronics America Inc
P-CHANNEL POWER MOSFET
$3.38
Available to order
Reference Price (USD)
1+
$3.38000
500+
$3.3462
1000+
$3.3124
1500+
$3.2786
2000+
$3.2448
2500+
$3.211
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the HAT1035R-EL-E by Renesas Electronics America Inc, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the HAT1035R-EL-E is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
IXYS
IXFA20N85XHV
Rohm Semiconductor
RTL020P02FRATR
Alpha & Omega Semiconductor Inc.
AOTF12N50
Fairchild Semiconductor
FQA35N40
onsemi
NTLUF4189NZTBG
Diodes Incorporated
DMTH8028LPSW-13
Infineon Technologies
IPP80N04S4L04AKSA1
Infineon Technologies
IPB180N10S403ATMA1
STMicroelectronics
STWA45N65M5
Infineon Technologies