HAT1128R01-EL-E
Renesas Electronics America Inc
Renesas Electronics America Inc
6A, 60V, 0.085OHM, 2-ELEMENT, P
$1.89
Available to order
Reference Price (USD)
1+
$1.89000
500+
$1.8711
1000+
$1.8522
1500+
$1.8333
2000+
$1.8144
2500+
$1.7955
Exquisite packaging
Discount
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Experience unmatched performance with the HAT1128R01-EL-E Bipolar Junction Transistor (BJT) by Renesas Electronics America Inc. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the HAT1128R01-EL-E delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Renesas Electronics America Inc for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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