HAT1130RWS-E
Renesas Electronics America Inc
Renesas Electronics America Inc
P-CHANNEL POWER MOSFET
$1.08
Available to order
Reference Price (USD)
1+
$1.08000
500+
$1.0692
1000+
$1.0584
1500+
$1.0476
2000+
$1.0368
2500+
$1.026
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The HAT1130RWS-E single MOSFET from Renesas Electronics America Inc is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the HAT1130RWS-E is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Toshiba Semiconductor and Storage
TPN6R303NC,LQ
Rectron USA
RM7N600IP
Diodes Incorporated
DMN2025UFDF-13
Infineon Technologies
IPB022N04LG
STMicroelectronics
STS5N15F4
Nexperia USA Inc.
PSMN3R3-80BS,118
Vishay Siliconix
SIDR140DP-T1-GE3
IXYS
IXFR80N50Q3
onsemi
BSS138W
Fairchild Semiconductor