HAT2218R-EL-E
Renesas Electronics America Inc
Renesas Electronics America Inc
POWER, 7.5A, 30V, N-CH MOSFET
$0.77
Available to order
Reference Price (USD)
1+
$0.77000
500+
$0.7623
1000+
$0.7546
1500+
$0.7469
2000+
$0.7392
2500+
$0.7315
Exquisite packaging
Discount
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The HAT2218R-EL-E from Renesas Electronics America Inc is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the HAT2218R-EL-E provides reliable performance in demanding environments. Choose Renesas Electronics America Inc for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.5A, 8A
- Rds On (Max) @ Id, Vgs: 24mOhm @ 3.75A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
- Power - Max: 1.5W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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