HAT2279N-EL-E
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 80V 30A 8LFPAK
$1.98
Available to order
Reference Price (USD)
1+
$1.98000
500+
$1.9602
1000+
$1.9404
1500+
$1.9206
2000+
$1.9008
2500+
$1.881
Exquisite packaging
Discount
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The HAT2279N-EL-E by Renesas Electronics America Inc is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the HAT2279N-EL-E is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 12.3mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-LFPAK-iV
- Package / Case: 8-PowerSOIC (0.154", 3.90mm Width)
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