HERA808G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE GEN PURP 8A TO220AC
$1.87
Available to order
Reference Price (USD)
1+
$1.87000
500+
$1.8513
1000+
$1.8326
1500+
$1.8139
2000+
$1.7952
2500+
$1.7765
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with the HERA808G single rectifier diode from Taiwan Semiconductor Corporation. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the HERA808G delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. Taiwan Semiconductor Corporation's HERA808G is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 80 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
- Capacitance @ Vr, F: 55pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Vishay General Semiconductor - Diodes Division
MBRB1660-E3/81
SemiQ
GP3D020A065A
Vishay General Semiconductor - Diodes Division
VS-MURB820TRL-M3
Littelfuse Inc.
LSIC2SD170B25
Vishay General Semiconductor - Diodes Division
ES2G-M3/5BT
Power Integrations
LXA10T600
Panjit International Inc.
SS14L_R1_00001
Microchip Technology
CDLL1A30
Infineon Technologies
IDW40E65D2FKSA1
Diotec Semiconductor