HFA3127B96-HC
Harris Corporation
Harris Corporation
RF 0.037A, 5-ELEMENT, ULTRA HIGH
$2.74
Available to order
Reference Price (USD)
1+
$2.74000
500+
$2.7126
1000+
$2.6852
1500+
$2.6578
2000+
$2.6304
2500+
$2.603
Exquisite packaging
Discount
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The HFA3127B96-HC by Harris Corporation is a premium RF Bipolar Junction Transistor (BJT) in the Discrete Semiconductor Products category. Engineered for high-frequency performance, this transistor provides exceptional gain and low noise, making it ideal for RF and microwave applications. Its advanced construction ensures reliability in harsh environments, suitable for military, aerospace, and medical devices. Key features include high transition frequency, excellent thermal management, and low distortion. Applications range from RF amplifiers to oscillators and mixers. Trust Harris Corporation for high-quality RF BJTs that meet the highest industry standards.
Specifications
- Product Status: Active
- Transistor Type: 5 NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
- Gain: -
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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