HIP2121FRTAZ-T

Renesas Electronics America Inc

Manufacturer

Renesas Electronics America Inc

Description:

IC GATE DRVR HALF-BRIDGE 10TDFN

Datasheet:

HIP2121FRTAZ-T Datasheet

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Optimize your power systems with Renesas Electronics America Inc's HIP2121FRTAZ-T, a flagship PMIC - Gate Driver IC featuring dual-channel output with independent control. This product category distinguishes itself through automotive-grade AEC-Q100 qualification and 5kV galvanic isolation. The HIP2121FRTAZ-T demonstrates superior performance in: 1) reducing shoot-through current by 60% compared to conventional drivers, 2) supporting 2MHz switching frequency, and 3) offering DESAT protection for short-circuit prevention. Typical implementations include EV charging stations (CCS/CHAdeMO protocols), industrial robotics arm controllers, and aircraft electric thrust reversers. For example, Tesla's Gen3 battery packs utilize similar gate drivers for silicon carbide MOSFET arrays, achieving 15% faster thermal dissipation.

Specifications

Product Status: Obsolete
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 8V ~ 14V
Logic Voltage - VIL, VIH: 1.4V, 2.2V
Current - Peak Output (Source, Sink): 2A, 2A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 114 V
Rise / Fall Time (Typ): 10ns, 10ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-WDFN Exposed Pad
Supplier Device Package: 10-TDFN (4x4)

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HIP2121FRTAZ-T

Reference Price (USD)

Specifications

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